The new blue-violet laser diodes displayed threshold current densities as low as 7.5kA/cm2 clear far-field pattern and a 405 nanometer wavelength. The gallium nitride-based laser diode is based on novel nonpolar orientations of GaN that were pioneered at UC Santa Barbara, according to the university.
"This is a groundbreaking advancement in laser diodes and a major step in solid-state lighting technology," said UCSB Chancellor Henry Yang. "The blue-violet laser will improve high density optical data storage for high definition TV, video discs, and optical sensors, and will also have applications in and long-term benefits for the communication, entertainment, medical, and environmental areas."
Source:
EETimes